digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr264-4 ? mcr264-12 thyristors silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings (t j = 25c unless otherwise noted) rating symbol value unit peak repetitive forward and reverse blocking voltage (1) (t j = 25 to 125c, gate open) mcr264-4 mcr264-6 mcr264-8 MCR264-10 mcr264-12 v drm v rrm 200 400 600 800 1000 volts forward current (t c = 80c) (all conduction angles) i t(rms) i t(av) 40 25 amps peak non-repetitive surge current ? 8.3ms (1/2 cycle, sine wave) 1.5ms i tsm 400 450 amps forward peak gate power p gm 20 watts forward average gate power p g(av) 0.5 watt forward peak gate current (300s, 120pps) i gm 2 amps operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c 1. v drm and v rrm for all types can be applied on a continuous basis. ratings appl y for zero or negative gate volt age; however, positive gate vo ltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant cu rrent source such that the voltage ratings of the devices are exceeded. these devices are rated for use in applications subject to high su rge conditions. care must be taken to ensure proper heat sink ing when the device is to be used at high sustained currents. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r jc 1 c/w thermal resistance, junction to ambient r ja 60 c/w electrical characteristics (t c = 25c unless otherwise noted. characteristics symbol min typ max unit peak forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm , i rrm - - - - 10 2 a ma forward ?on? voltage (1) (i tm = 80a) v tm - 1.4 2 volts gate trigger current (continuous dc) (anode voltage = 12 vdc, r l = 100 ohms, t c = -40c) i gt - - 15 30 50 90 ma gate trigger voltage (continuous dc) (anode voltage = 12 vdc, r l = 100 ohms) v gt - 1 1.5 volts gate non-trigger voltage (anode voltage = rated v drm , r l = 100 ohms, t j = 125c) v gd 0.2 - - volts holding current (anode voltage = 12 vdc) i h - 30 60 ma turn-on time (i tm = 40 a, i gt = 60 madc) t gt - 1.5 - s critical rate-of-rise of off-state voltage (gate open, v d = rated v drm , exponential waveform) dv/dt - 50 - v/s 1. pulse test: pulse width 300s, duty cycle 2%. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr264-4 ? mcr264-12 thyristors silicon controlled rectifiers mechanical characteristics case to-220ab marking alpha-numeric pin out see below sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr264-4 ? mcr264-12 thyristors silicon controlled rectifiers sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130108
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